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Photocatalytic response of Fe, Co, Ni doped ZnO based diluted magnetic semiconductors for spintronics applications

DOI:10.1016/j.spmi.2018.10.028 期刊:Superlattices and Microstructures 出版年份:2019 更新时间:2025-09-10 09:29:36
摘要: Novel attempts were made to prepare diluted magnetic semiconductors separately with 10 at.% each of Fe, Co and Ni doped ZnO by sol-gel method. The XRD analysis of the films detect wurtzite ZnO as the pure phase present in the synthesized films. The average particle size of 10 at.% Fe, Co, Ni doped and pristine ZnO derived films are found as 10.01 nm, 12.03 nm, 15.36 nm and 16.16 nm respectively. The absorbance spectra of the oxides reveal intrinsic band gap of ZnO, Fe2O3, CoO and NiO are 3.29 eV, 2.53 eV, 2.42 eV and 3.64 eV respectively. The near band edge absorbance of pure ZnO was recorded as about 377 nm (~3.29 eV) which shifts to lower wavelength with reduction in particle size in Ni, Co and Fe doped ZnO sample as the effect of quantum confinement. The PL spectra of the developed films reveal multiple peaks between 450 nm and 500 nm, on excitation wavelength at 370 nm, as the evidence of photochemical properties of the samples. Vibrating sample magnetometer analysis reveals 10 at.% Fe doped ZnO posses minimum value of squareness 0.118 and coersivity 177.738 Oe which prove it to be the best magnetic material among all four samples prepared. Raman spectra show evidence of phonon confinement for 10 at.% Fe doped ZnO sample by broadening of Eg, T2g and A1g peaks, which is not so prominent for other samples. In addition, the photochemical degradation reaction is maximum for 10 at.% Fe doped ZnO sample which proves to be most suitable material for optoelectronic devices.
作者: S.S. Ghosh,C. Choubey,A. Sil
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Investigating the photocatalytic response of Fe, Co, Ni doped ZnO based diluted magnetic semiconductors for spintronics applications.

The present work demonstrates semiconducting, magnetic, chemical and optical performances of 10 at% Fe, Co and Ni doped ZnO and pristine ZnO thin film samples prepared by sol-gel technique. The microstructural analysis by FESEM reveals particle size increases from 10 to 16 nm and the AFM analysis of the corresponding materials shows surface roughness increases from 10.31 nm to 28.59 nm for Fe doped ZnO sample. The semi-quantitative analysis of the elements matches with the initial value of dopant concentration. The absorbance spectra of the oxides reveal intrinsic band gap of ZnO, Fe2O3, CoO and NiO are 3.29 eV, 2.53 eV, 2.42 eV and 3.64 eV respectively. The band gap of the samples lying in visible range implies the potential application of these semiconductor oxides also in the area of spintronics application allied with optoelectronic devices. The PL spectra of the films at near band edge excitation show the photochemical activity with the presence of multiple bands between 450 nm and 500 nm and oxygen vacancy formation especially for the Fe and Co doped samples. VSM analysis reveals Fe doped ZnO material posses minimum squareness of 0.118 and coercivity of 177.74 Oe which proves it to be best magnetic material amongst all four samples. Raman spectra proves effect of phonon confinement for Fe doped ZnO sample by broadening of Eg, T2g and A1g peaks, which is not so prominent for other samples, resulting best possible spintronics application with this material compared to other materials. The photochemical activity of all of these DMSs also make them potentially feasible for future spintronics application for optoelectronic devices like spin solar cell.

The study focuses on the photocatalytic response of Fe, Co, Ni doped ZnO based diluted magnetic semiconductors for spintronics applications, but does not explore the potential for room temperature ferromagnetic materials or the effects of higher dopant concentrations.

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