研究目的
Investigating the floating zone technique for producing monocrystalline silicon ingots with high purity and low defects compared to other methods like Czochralski and directional solidification.
研究成果
The floating zone technique is superior for producing high-purity, low-defect monocrystalline silicon ingots compared to Czochralski and directional solidification methods. However, challenges such as high costs and limitations in ingot size need to be addressed through technological advancements and process optimization.
研究不足
The floating zone technique is limited by the high cost involved and the difficulty in producing large diameter ingots (greater than 150 mm). The process also requires optimization of parameters like raw material quality, cooling rate, and surrounding atmosphere to ensure high-quality crystal production.
1：Experimental Design and Method Selection:
The study compares the floating zone technique with Czochralski and directional solidification methods for producing monocrystalline silicon ingots. It discusses the advantages and challenges of each method.
2：Sample Selection and Data Sources:
The research uses polycrystalline silicon as the feedstock for the floating zone technique, focusing on the quality of raw materials and the environment during the process.
3：List of Experimental Equipment and Materials:
Equipment includes radio-frequency heaters for melting, inert atmosphere chambers (argon-filled), and doping materials like boron and phosphorus.
4：Experimental Procedures and Operational Workflow:
The process involves melting a zone of the polycrystalline silicon rod using a radio-frequency heater and moving the heater to grow the monocrystalline ingot. The ingot and feed rods are rotated for thermal symmetry and melt mixing.
5：Data Analysis Methods:
The study analyzes the quality of the produced monocrystalline silicon in terms of purity, defect density, and resistivity.
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