研究目的
Investigating the effects of atomic-layer-deposited (ALD) Al2O3 passivation layers with different thicknesses on the interface chemistry and electrical properties of sputtering-derived HfYO gate dielectrics on Si substrates.
研究成果
The study concludes that a 1-nm-thick Al2O3 passivation layer is optimal for improving the interfacial properties of HfYO/Si gate stacks. Annealing at 250°C further enhances the electrical properties, demonstrating the lowest border trapped oxide charge density and smallest gate-leakage current. The main conduction mechanisms are identified as Poole-Frenkle emission at low and medium electric fields and direct tunneling at high electric fields.
研究不足
The study is limited to the effects of Al2O3 passivation layer thickness and annealing temperature on the electrical properties of HfYO/Si gate stacks. The investigation does not cover other passivation materials or higher annealing temperatures.
1：Experimental Design and Method Selection:
The study involved the fabrication of metal-oxide-semiconductor capacitors with HfYO/Al2O3/Si gate stacks, using ALD for Al2O3 passivation layers and magnetron sputtering for HfYO films. The samples were annealed at different temperatures in forming gas.
2：Sample Selection and Data Sources:
n-type (100) Si wafers were used as substrates. The thickness of Al2O3 passivation layers varied (0.5 nm, 1 nm, 2 nm, and 3 nm), and the electrical properties were measured using a semiconductor analyzer.
3：5 nm, 1 nm, 2 nm, and 3 nm), and the electrical properties were measured using a semiconductor analyzer.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment included an ALD chamber (LabNano 9100, ENSURE NANOTECH), magnetron sputtering system (JSD 400, JiaShuo Vacuum Technology Co. Ltd.), spectroscopic ellipsometry (SC630, SANCO Co, Shanghai), and X-ray photoelectron spectroscopy (XPS, ESCALAB 250Xi Thermo Scientific).
4：Experimental Procedures and Operational Workflow:
The Si substrates were cleaned and then Al2O3 passivation layers were deposited. HfYO films were co-sputtered, and the samples were annealed. Top and back Al electrodes were deposited for electrical measurements.
5：Data Analysis Methods:
Electrical properties were characterized by capacitance-voltage (C-V) and current density-voltage (J-V) measurements. XPS was used for interface chemistry analysis.
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