研究目的
To investigate the deposition of tin oxide thin films with high porosity and variable morphology applying GLAD assisted with magnetron sputtering, and to demonstrate the influence of substrate annealing and doping on crystalline structure, chemical state and morphology of the films.
研究成果
Highly porous SnO2 and Pd-SnO2 films with variable geometry were deposited using GLAD. Annealing during deposition resulted in high crystallinity of the films while maintaining a high surface area. XPS, SRPES and TEM measurements showed that Sn4+ is the main oxidation state. Formation of Sn-Pd alloy was confirmed by XPS and TEM in case of Pd-doped SnO2.
研究不足
The technical and application constraints of the experiments include the resolution limits of SAED and the encapsulation of Pd by tin oxide affecting SRPES measurements.
1:Experimental Design and Method Selection:
Non-reactive rf-magnetron sputtering with integrated GLAD technique was used to deposit SnO2 and Pd-SnO2 nanocolumnar films on SiOx/Si(001) substrates.
2:Sample Selection and Data Sources:
The films were deposited on SiOx/Si(001) substrates.
3:List of Experimental Equipment and Materials:
A 2 inch diameter ceramic target (Kurt J. Lesker,
4:99% pure) was used for sputtering of tin oxide. Pd wires (Goodfellow, 95% pure) were placed on the tin oxide target surface for Pd-SnO2 deposition. Experimental Procedures and Operational Workflow:
The rf power applied to the target was 25 W. The deposition was carried out in Ar atmosphere by keeping the total pressure constant at
5:27 Pa. The growth rate of the films was about 32 nm min-1 at GLAD and 6 nm min-1 at normal deposition (ND) conditions. Data Analysis Methods:
Characterizations of the tin oxide films were performed by means of SEM, TEM, XPS and SRPES.
独家科研数据包,助您复现前沿成果,加速创新突破
获取完整内容