研究目的
To investigate the dependence of the a-C:H:SiOx films physico-mechanical properties, prepared by the PACVD method with the use of polyphenylmethylsiloxane (PPMS) as a precursor, on the PPMS flow rate.
研究成果
The deposition rate of a-C:H:SiOx films increases with the PPMS flow rate without significant deterioration of mechanical properties. The maximum endurance capability and resistance to plastic deformation were achieved at a PPMS flow rate of 175 μl/min.
研究不足
The study is limited to the effect of PPMS flow rate on the physico-mechanical properties of a-C:H:SiOx films. Other deposition parameters and their interactions were not explored.
1：Experimental Design and Method Selection:
The deposition of a-C:H:SiOx films was performed using plasma activated chemical vapour deposition (PACVD) in a mixture of argon and polyphenylmethylsiloxane (PPMS) vapor with an impulse bipolar bias voltage applied to the substrate.
2：Sample Selection and Data Sources:
Monocrystalline silicon (100) wafers were used as substrates.
3：List of Experimental Equipment and Materials:
A plasma assisted chemical vapor deposition system, NanoTest 600 nanoindenter, Centaur U HR complex for Raman spectroscopy, Nicolet 5700 Fourier transform infrared spectrometer, Solver P47 atomic force microscope, and Linnik microinterferometer MII-4 were used.
4：Experimental Procedures and Operational Workflow:
The substrates were cleaned with argon ions before deposition. Films were deposited at different PPMS flow rates, and their properties were characterized.
5：Data Analysis Methods:
The hardness and elastic modulus were determined by the Oliver-Pharr method. The elastic recovery was calculated from the load/unloading curves. Raman and IR-Fourier spectroscopy were used to analyze the films' structure.
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