研究目的
Investigating the radiative recombination and related light emission processes in two-dimensional periodic close-packed nanopore arrays in gallium nitride (np-GaN) produced by nonlithographic nanopatterning.
研究成果
The study provides new insights into the behaviors and physical mechanisms regulating light emission processes in np-GaN, critical to the development of nano-opto-electronic devices based on mesoscopic GaN. The primary mechanism of the room-temperature PL emission is identified as excitonic and not interband free-carrier recombination.
研究不足
The samples produced by nonlithographic techniques typically suffer from broad diameter distributions, increased defect densities, and reduced crystal quality. The net PL intensity is found to experience a near 3- to 4-fold decrease in case of np-GaN, in part due to the polarization-absorption anisotropy.
1：Experimental Design and Method Selection:
Temperature-dependent photoluminescence (PL) spectroscopy and Raman spectroscopy were used to study the structural, strain, and light emission characteristics of np-GaN.
2：Sample Selection and Data Sources:
np-GaN samples were produced by reactive ion etching (RIE) of GaN epilayers using nanoporous regimented free-standing alumina as a top etching mask.
3：List of Experimental Equipment and Materials:
Renishaw 2000 Raman spectrometer, Triax spectrometer (J-Y Horriba), Hamasutsu photomultiplier tube (PMT), 450 W Xenon lamp, Olympus microscope equipped with 15x UV objective.
4：Experimental Procedures and Operational Workflow:
The samples were characterized using SEM imaging, Raman, optical reflection, temperature, and intensity-dependent photoluminescence spectroscopic characterizations.
5：Data Analysis Methods:
The data were analyzed to assess the change in the strain characteristics and RIE-induced crystal damage, and to investigate the band-edge and near-band-edge optical emission characteristics.
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