摘要： For decades, inorganic n-type metal-oxide semiconductors have attracted great interest across a wide range of applications due to their excellent electrical property, low cost, high optical transparency, and good ambient stability. The next attention has focused on the development of high-performance p-type semiconductors with comparable opto/electric properties to n-type counterparts. This paper provides a comprehensive overview of recent progress in solution-processed inorganic p-type semiconductors that can be applied as channel layers in thin-?lm transistors and complementary metal-oxide semiconductor-based integrated circuits. We ?rst introduce conventional p-type oxide semiconductors and review their achievements on related devices. Then, we pay a speci?c focus on emerging (pseudo)halide materials for realization of transparent, low-temperature and high-performance printable electronics and circuits.