摘要： Stochastic resonance (SR) phenomenon is emerged in organic field effect transistors (OFETs) using π-conjugated polymer, where application of external noise to the OFET system enhances signal/information processing performance which is often found in biological systems. The channel conductivity of the OFET is slightly increased by spin-coating using heated semiconductor polymer solution with heated glass substrate. In order to improve frequency responses of OFET, optimal width of the gate electrode is explored. Furthermore, it turns out that scratching and removing semiconductor film outside the source-drain electrodes and the channel enhances the On-Off current ratio of the device. These fabrication processes lead to steeper nonlinearity on the IDS vs. VGS curve, resulting in emergence of SR, which is fingerprinted in increase of correlation value between input and output signals with increase of intensity of external noise.