研究目的
Investigating the controlled detachment of (111) silicon by stress induced spalling (SIS) process for potential applications in photovoltaics and microelectromechanical systems (MEMS).
研究成果
The study successfully demonstrated the controlled detachment of silicon foils using the SIS process, with thicknesses ranging from ~50 μm to ~170 μm. Analytical and numerical models were developed to predict detachment conditions, showing good agreement with experimental results. Residual stress analysis revealed both tensile and compressive stresses in the foils. The process shows potential for applications in photovoltaics and MEMS, though further improvements in foil quality are needed.
研究不足
The study does not account for the influence of the glue layer in the analytical model, which may affect the accuracy of predicted detachment depths. Additionally, the quality of the detached silicon foils requires improvement.
1：Experimental Design and Method Selection:
The SIS process involves gluing a metallic stressor layer on top of a silicon substrate using an epoxy adhesive and then cooling the structure in liquid nitrogen to induce thermal stress leading to silicon foil detachment.
2：Sample Selection and Data Sources:
Czochralski (CZ) monocrystalline silicon substrates of (10x10x0.52) mm3 with (111) orientation were used.
3：52) mm3 with (111) orientation were used.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Steel, copper, aluminum, nickel, and titanium were used as stressor layers. SEM (TESCAN MIRA 3 XMU) and Raman spectroscopy (InVia Reflex RENISHAW system) were used for analysis.
4：Experimental Procedures and Operational Workflow:
The stressor layer was glued to the silicon substrate, dried, and then cooled in liquid nitrogen to induce detachment.
5：Data Analysis Methods:
Thermal stress distribution was analyzed using analytical and numerical modeling. Residual stresses in silicon foils were characterized by Raman spectroscopy.
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