研究目的
Investigating the development of a new high-temperature Al-Zn lead-free soldering process utilizing superplasticity for SiC power devices to achieve high-temperature cycle durability.
研究成果
The developed Al-Zn eutectoid solder joint demonstrates superior stress-relaxation and high-temperature cycle durability, making it suitable for SiC power semiconductor devices. The lamellar structures formed during the process contribute significantly to the stress-relaxation effect.
研究不足
The study focuses on the Al-Zn eutectoid alloy's application in SiC power devices, with potential limitations in other semiconductor materials or different operating conditions.
1：Experimental Design and Method Selection:
The study utilized a joining process involving an Al-78wt.%Zn preparation, interfacial cleaning, heating to solid-liquid coexisting temperature, ejection of β(Zn) by press stress, and transformation to a superplastic composition.
2：Sample Selection and Data Sources:
Samples consisted of SiC dies and insulation substrates joined with Al-Zn eutectoid alloy.
3：List of Experimental Equipment and Materials:
Al-Zn eutectoid alloy, SiC die, insulation substrate, press stress equipment.
4：Experimental Procedures and Operational Workflow:
The process included cleaning at 250-270oC, heating to 420-430oC, applying press stress to eject β(Zn), and cooling to form lamellar structures.
5：Data Analysis Methods:
Evaluated stress-relaxation effect through damping capacity and Young's modulus measurements, and conducted temperature cycle tests.
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