研究目的
Investigating the microstructure and dielectric properties of Bismuth substituted Gd3Fe5O12 ceramics prepared by the conventional solid state reaction route.
研究成果
The substitution of Bi for Gd in GIG significantly reduces the sintering temperature and improves densification. The dielectric constant increases with Bi concentration, while the quality factor slightly decreases. The study suggests that near zero temperature coefficient of resonant frequency may be obtained for specific Bi concentrations.
研究不足
The study is limited to the effects of Bi substitution on the microstructure and dielectric properties of Gd3Fe5O12 ceramics. The synthesis process requires high calcination temperatures, which may limit practical applications.
1：Experimental Design and Method Selection:
The study employed the conventional solid state reaction route for the synthesis of Gd3-xBixFe5O12 ceramics. The phase purity and crystallinity were confirmed using a Bruker D8 Advance Diffractometer.
2：Sample Selection and Data Sources:
High-purity grade Gd2O3, Bi2O3, and Fe2O3 powders were used as starting materials.
3：List of Experimental Equipment and Materials:
Equipment included a Bruker D8 Advance Diffractometer, Scanning Electron Microscope (Carl Zeiss EVO18SEM), LCR meter (HIOKI 3532-50 LCR HI-TESTER Japan), and Network analyzer (ROHDE & SCHWARZ, ZV-Z135).
4：5). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The powders were mixed by ball milling, preheated, calcined, pressed into pellets, and sintered at various temperatures. The dielectric properties were measured at room temperature.
5：Data Analysis Methods:
The temperature coefficient of resonant frequency was calculated by monitoring variations of TE01d mode resonant frequency with temperature.
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