研究目的
Investigating the structural, optical, and photoluminescence properties of Ho3+ ion doped BaZrO3 thin films.
研究成果
Aliovalent Ho3+ ion doped BaZrO3 thin films were successfully grown by PLD technique, showing single cubic perovskite BaZrO3 phase. The variation in crystallite size with Ho content suggests the amphoteric behavior of Ho3+ ion. The fabricated thin films are potential nano phosphor for optoelectronic devices due to their structural, optical, and emission properties.
研究不足
The study is limited to the effects of Ho doping on BaZrO3 thin films up to 4 at. %. The solubility limit of Ho into the matrix and the concentration quenching effect are noted as potential areas for optimization.
1：Experimental Design and Method Selection:
Ho doped BaZrO3 thin films were prepared via pulsed laser deposition technique using Nd: YAG laser (532nm, 100mJ, 10 Hz).
2：Sample Selection and Data Sources:
Sintered Ho doped BZO targets with varying Ho concentration were prepared by conventional powder metallurgy technique.
3：List of Experimental Equipment and Materials:
X-ray diffractrometer (XRD), Hitachi S-3700 N Scanning Electron Microscope (SEM), Spectroscopic Ellipsometry (J. A. Woolam Co. Inc. Various Angle Spectroscopic Ellipsometry), Photoluminescence spectrometer.
4：Experimental Procedures and Operational Workflow:
Depositions were carried out in the oxygen ambient keeping the pressure at 100 m Torr. Single crystal silicon (0 0 1) substrate was kept at 400°C temperature during all the depositions. Post-deposition annealing of the films was carried out at 800°C.
5：Data Analysis Methods:
The phase purity and crystallinity of these films was determined by XRD. Surface properties were examined by SEM. Optical band gap energies were calculated by SE. Photoluminescence emission was observed using PL spectrometer.
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