研究目的
Comparative study on structure and properties of ZnO thin films prepared by RF magnetron sputtering using pure metallic Zn target and ZnO ceramic target.
研究成果
ZnO thin films fabricated using the ZnO ceramic target exhibited better properties than those using the pure metallic Zn target, attributed to reduced oxygen vacancies and film defects. Optimal performance was achieved at a substrate temperature of 400°C.
研究不足
The study focuses on the comparison between two types of sputtering targets and the effect of substrate temperature, but does not explore other deposition parameters or alternative substrates.
1：Experimental Design and Method Selection:
ZnO thin films were deposited onto Si substrates by RF magnetron sputtering using pure metallic Zn and ZnO ceramic targets under different substrate temperatures (300°C to 600°C).
2：Sample Selection and Data Sources:
3-inch double-sided polished Si(100) substrates were used.
3：List of Experimental Equipment and Materials:
Vacuum chamber (JGP-560), RF magnetron sputtering system, pure metallic Zn target, ZnO ceramic target, Ar/O2 gas mixture.
4：Experimental Procedures and Operational Workflow:
Substrates were cleaned, heated, and ZnO films were deposited under controlled conditions.
5：Data Analysis Methods:
XRD, AFM, Four-probe Resistivity Tester, and ultraviolet spectrophotometer were used for characterization.
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