研究目的
The aim of this study investigates the some physical properties of MoS2 thin film produced using a thermionic vacuum arc system (TVA).
研究成果
In this paper, MoxSy thin film has coated on the glass substrate with the thermionic vacuum arc system (TVA). TVA is rapid thin film depsoition system. MoxSy layer thickness was muasured as to be approximately 30 nm. In X-ray diffraction analyses, different MoxSy crystallite phases were detected. The properties of the structure were corrected by variously analysis method. Average roughness of the deposited layer is 1.2 nm. The layer thickness and dimension structure. According to the optical analysis results, the band gap value was estimated as to be 1.97 eV, and this value corrected by photoluminescence measurement. defects structures of the deposited layer can estimate by the optical band gap of the 2- dimension structure. According to the optical analysis results, the band gap value was estimated as to be 1.97 eV, and this value corrected by photoluminescence measurement. friction coefficient value of the un-coated glass substrate. TVA is a proper high vacuum deposition technology for the low friction coefficient layer.
研究不足
The technical and application constraints of the experiments, as well as potential areas for optimization, are not explicitly mentioned in the paper.
1:Experimental Design and Method Selection:
A TVA system was used to deposit MoxSy thin film onto glass substrate. The TVA system consists of anode and cathode and it is used in thin film production under high vacuum conditions. The cathode is a simple electron gun and emits the electrons by using high ac current. The anode is a boat, contains the material to be coat. The MoS2 (purity 98%) was bought and used as anode material. The material placed inside of the anode boat. For the discharge, pressure of 1 x10-4 torr, duration of 160 second, filament current of 18 A, discharge current of 0.4 A, applied voltage of 150 V were selected.
2:4 A, applied voltage of 150 V were selected. Sample Selection and Data Sources:
2. Sample Selection and Data Sources: MoxSy thin film coating was done onto glass substrate.
3:List of Experimental Equipment and Materials:
A Panalytical Empryan XRD device was used for the microstructural characterization. Bragg-Brentano geometry and Pixel3D detector were used for the nano layer analysis. The thickness of the deposited film was measured as approximately 30 nm using a Filmetrics F20 interferometer and TT90 Spectroscopic ellipsometer. Zeiss Supra 40 VP field emission electron microscopy (FESEM) device was used for the surface imaging. Ambios Q-Scope atomic force microscopy was used to determining the two-dimension (2D), three-dimension (3D) surface images, average roughness, and grains distribution graphs of the coated surface. Attension theta contact angle measurement device was used for contact angle measurement. Four different heavy media were used for contact angle measurement. They were diiodomethane, ethylene glycol, formamide and distilled water. PerkinElmer LS 45 Fluorescence Spectrometer device was used for photoluminescence measurements. Renishaw inVia Raman Microscope RE 04 was used for Raman spectroscopy measurement. A 532 nm wavelength laser was used for the measurement. CSM Instrument Tribometer was used for friction coefficient measurement.
4:Experimental Procedures and Operational Workflow:
The thickness of the layer can be control by a quartz crystal thickness monitor. For the discharge, pressure of 1 x10-4 torr, duration of 160 second, filament current of 18 A, discharge current of 0.4 A, applied voltage of 150 V were selected.
5:4 A, applied voltage of 150 V were selected. Data Analysis Methods:
5. Data Analysis Methods: The Scherrer equation is used to calculate the crystallite size (D) values for the nano materials. The dislocation density (δ) and microstrain (ε) were calculated from equation 2 and equation 3, respectively. Optical properties were determined by Cauchy model. In the Cauchy dispersion model, the refractive index n (λ) as a function of the wavelength is given by; n(λ) = A! + B!/λ! + C!/λ!. Calculate the band gap energy of the coated thin film, the optical method was used. The band gap calculation, below equation is used; αhυ = A(hυ ? Eg)!.
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Zeiss Supra 40 VP field emission electron microscopy (FESEM) device
Supra 40 VP
Zeiss
Surface imaging
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Ambios Q-Scope atomic force microscopy
Q-Scope
Ambios
Determining the two-dimension (2D), three-dimension (3D) surface images, average roughness, and grains distribution graphs
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PerkinElmer LS 45 Fluorescence Spectrometer
LS 45
PerkinElmer
Photoluminescence measurements
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Thermionic Vacuum Arc (TVA) system
Deposition of MoxSy thin film onto glass substrate
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Panalytical Empryan XRD device
Panalytical
Microstructural characterization
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Filmetrics F20 interferometer
F20
Filmetrics
Measurement of film thickness
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TT90 Spectroscopic ellipsometer
TT90
Measurement of optical properties
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Attension theta contact angle measurement device
Attension
Contact angle measurement
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Renishaw inVia Raman Microscope RE 04
inVia Raman Microscope RE 04
Renishaw
Raman spectroscopy measurement
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CSM Instrument Tribometer
CSM Instrument
Friction coefficient measurement
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