摘要： This work contains description of the oxide thin films fabricated by Physical Vapor Deposition technique in high vacuum on transparent (quartz) and semiconductor (n-type silicon) substrates kept at room temperature during the deposition process. Titanium, tin and indium oxides were chosen as the material for investigation. Selected films were annealed after fabrication in ambient atmosphere for 12 hours at the temperature equal to 100 °C, 150 °C, 250 °C and 450 °C. Structural properties were examined by optical images and AFM measurements. The films exhibit high structural dependence on the temperature of the annealing process. Quality of the films can be improved by using an appropriate temperature during the annealing process. Nonlinear optical effects were studied using Third Harmonic Generation with Nd:YAG laser at 1064 nm wavelength as a fundamental beam. The values of third-order NLO susceptibilities were calculated and analyzed. We find that the nonlinear optical properties were strictly connected with the morphology. Moreover the temperature of annealing process can change the structural and optical properties of the tested oxide thin films.