研究目的
Investigating the structural, surface morphological, electrical and optical properties of TiO2 doped with SnO2 thin films prepared by DC Sputtering technique.
研究成果
The microstructure, optical and electrical properties of the TiO2 doped with SnO2 thin films of anatase phase were confirmed by XRD and EDAX analysis. The activation energy calculated from the resistivity versus temperature variation has been found to be Ea=0.69 eV for the film deposited at 250°C. EDX confirmed the presence of Ti, Sn and O. Surface morphology by SEM and AFM shows uniform and pin hole free films. Uniform surface coverage with fine-grained structure was observed from SEM, TEM and AFM analysis. FTIR and TEM results confirmed the formation of monophase TiO2 doped with SnO2 films with nano grains.
研究不足
The study is limited to the characterization of TiO2 doped with SnO2 thin films prepared by DC Sputtering technique. The effects of other doping concentrations and deposition techniques are not explored.
1:Experimental Design and Method Selection:
DC reactive magnetron sputtering technique was used to prepare TiO2 doped with SnO2 thin films. The precleaned glass substrates were loaded inside the vacuum chamber and Ti target was used as a source. The SnO2 powder of 10% was doped with this target. The distance between the substrate and the target was maintained at 5 cm. The chamber was evacuated with rotary pump and diffusion pump better than 4 × 10-6 Torr as a base pressure. Argon was used as the sputtering gas. Oxygen was used as the reactive gas. The deposition was carried out by adjusting the various deposition parameters that is different ratios of Ar and O2 substrate temperatures, sputtering power, sputtering time and distance between target and substrate, etc.
2:Sample Selection and Data Sources:
The as synthesized target was TiO2-SnO2 was used to deposit on the glass substrates.
3:List of Experimental Equipment and Materials:
Ti target (Sigma Aldrich, USA 99.99% pure), SnO2 powder (Sigma Aldrich, USA 99.7% pure), PANanlytical, X’pert PRO powder diffractometer, digital scanning microscope HITACHI, S-3000H, Picoscan 2000 scanning profile AFM microscopy, 200 KV Tecnai-20 G2 TEM Instrument.
4:99% pure), SnO2 powder (Sigma Aldrich, USA 7% pure), PANanlytical, X’pert PRO powder diffractometer, digital scanning microscope HITACHI, S-3000H, Picoscan 2000 scanning profile AFM microscopy, 200 KV Tecnai-20 G2 TEM Instrument.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The deposited oxide thin film was characterized for their structural, surface morphological, electrical and optical properties. X-ray diffraction is used for studying the nature and structure, scanning electron, atomic force microscopy and transmission electron microscopy are used to identify the surface morphology of the prepared films. The Van der Pauw technique is employed to measure electrical resistivity and Hall mobility of the film. Stylus profilometry will be helpful to find the thickness of the film, structural studies by X-ray, and micros structural analysis of the film.
5:Data Analysis Methods:
The optical bandgap Eg can be determined from absorption spectrum as well as the transmittance spectra. The absorption coefficient α depends on the wavelength λ. The films are highly transparent in the visible region as in the case of 90% TiO2:10% SnO2 films. These spectra were recorded in the transmission configuration with glass substrate as reference in the UV-Vis-NIR spectrometer.
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