摘要： In recent years, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) have shown outstanding performance in flexible circuit applications, active matrix display and so on. Therefore, they will play an increasingly important role in the future of electronic applications. At the same time, an analytical model that predicts the electrical characteristics of IGZO TFTs is also critical. In this paper, we present a current and capacitance compact model of a-IGZO TFTs. The compact model can be applied to different channel lengths for a-IGZO TFTs. Besides, it is capable of capturing device characteristics and of maintaining high computational efficiency. Its accuracy is validated through the extensive comparisons between model results and experimental data.