研究目的
Investigating the fabrication of photonic nanostructures from hexagonal boron nitride (hBN) using a hybrid reactive ion etching (RIE) and electron beam-induced etching (EBIE) technique for applications in quantum photonics and phonon polaritonics.
研究成果
The study demonstrates a versatile nanofabrication approach for creating suspended and supported photonic devices from hBN with high-quality factors. This approach is a significant step toward integrated quantum photonics platforms based on hBN and other layered vdW materials.
研究不足
The hybrid RIE-EBIE process can lead to fabrication artefacts due to contamination and micromasking effects. The process requires optimization to minimize these effects and achieve the best device functionalities.
1：Experimental Design and Method Selection:
The study employs a hybrid RIE and EBIE technique for fabricating hBN photonic devices.
2：Sample Selection and Data Sources:
hBN flakes are transferred onto silicon or silicon dioxide substrates via mechanical exfoliation.
3：List of Experimental Equipment and Materials:
Includes a Zeiss Supra 55 SEM equipped with a Raith EBL system, Oxford Instruments PlasmaPro 80 RIE, and polymethyl methacrylate (PMMA) A4 as a resist.
4：Experimental Procedures and Operational Workflow:
The process involves mechanical exfoliation of hBN, deposition of a tungsten mask, EBL, RIE, and EBIE to etch hBN structures.
5：Data Analysis Methods:
Quality factors of the fabricated devices are measured using photoluminescence (PL) measurements.
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