研究目的
To report enhancements to the elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) architecture, including a reduced mask-count process, a bottom-gate self-aligned process for reduced parasitic overlap capacitance, and a lower temperature process for better compatibility with flexible substrates.
研究成果
The EMMO TFT architecture offers significant advantages over conventional TFT architectures, including reduced manufacturing cost, lower signal delay, and better compatibility with flexible substrates. The enhancements presented further extend these advantages.
研究不足
The study focuses on the EMMO TFT architecture and its enhancements, with comparisons to conventional TFT architectures. The limitations include the specific focus on IGZO-based TFTs and the need for further testing on a wider range of flexible substrates.
