研究目的
Investigating how the zero-voltage duration (0Vd) affects the tendency of degradation during pulsed gate bias stress in a-InGaZnO thin film transistors (TFTs).
研究成果
The degree of degradation in pulsed NBIS is highly dependent on 0Vd in a period, whereas in pulsed PBS, there was no apparent dependence on 0Vd. The different tendencies are due to the fundamental dissimilarity in the degradation mechanism under NBIS and PBS.
研究不足
The study focuses on the effect of zero-voltage duration during pulsed gate bias stress in a-InGaZnO TFTs, and the findings may not be directly applicable to other types of TFTs or stress conditions.
1：Experimental Design and Method Selection:
DC or pulsed negative bias illumination stress (NBIS) or positive bias stress (PBS) was applied to the TFTs for effective stress time of 4,000 s.
2：Sample Selection and Data Sources:
TFTs with width = 60 μm and length = 5 μm were used in all experiments.
3：List of Experimental Equipment and Materials:
HP 4156A semiconductor parameter analyzer, Agilent 81104A pulse generator.
4：Experimental Procedures and Operational Workflow:
Pulsed gate bias was applied by periodically alternating between zero voltage and stress voltage. During the NBIS, white light from light emitting diode with intensity of 4000 l× was illuminated.
5：Data Analysis Methods:
Transfer characteristics were measured by sweeping gate-source voltage VGS from ?20 V to +20 V at a fixed drain-source voltage VDS = 0.1 V.
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