摘要： To obtain molybdenum disulfide (MoS2) patterns without any mechanical problems caused by the transfer process, direct current (DC) sputtering and rapid thermal processing (RTP) were used to form MoS2 instead of the conventional chemical vapor deposition (CVD) process. To form MoS2 on a soda-lime glass substrate at temperatures below 600 °C, MoS2 films were deposited at various DC sputtering powers and annealed at various temperatures from 400 °C to 550 °C. From the scanning electron microscope (SEM) and atomic force microscope (AFM) results, the surface morphologies of the MoS2 films can be observed, depending on the sputtering power and the film thickness. The Raman spectrum results showed that the E1 2g and A1 g mode peaks appeared at approximately 372 cm?1 and 400 cm?1, respectively, and the MoS2 surface was crystallized in the in-plane direction. The X-ray photoelectron spectroscopy (XPS) results showed noticeable S 2p (2p 1/2, 2p 3/2) peaks and Mo 3d (3d 3/2, 3d 5/2) peaks at stable binding energies after RTP at temperatures below 600 °C. The high mobilities and carrier densities of all the MoS2 films can be investigated from the Hall measurements.