研究目的
Investigating the impact of surface potential modulation on the luminescence properties of InGaN/GaN nano-disk in a wire heterostructure.
研究成果
The study demonstrates that surface potential modulation significantly impacts the luminescence properties of InGaN/GaN nano-disk in a wire heterostructure. The change in hole bound state energy due to parabolic potential well near the side-wall is identified as the dominating factor. The findings suggest that these structures have great potential for fabricating highly efficient LEDs.
研究不足
The study is limited by the randomness introduced in the size distribution of the nano-disks during wet-etching, which affects the uniformity of the luminescence properties. Additionally, the recovery from surface damage saturates for longer processing times, limiting further improvements.
1：Experimental Design and Method Selection:
The study involves the fabrication of InGaN/GaN nano-disk in a wire array using Metal Organic Chemical Vapour Deposition (MOCVD) technique and subsequent dry and wet etching processes. The impact of surface potential modulation on photoluminescence properties is investigated.
2：Sample Selection and Data Sources:
The samples are treated with successive wet-etching steps, and their photoluminescence properties are measured as a function of size and surface potential.
3：List of Experimental Equipment and Materials:
MOCVD system, ICP-RIE for etching, SEM for imaging, KPFM for surface potential measurement, and PL measurement setup.
4：Experimental Procedures and Operational Workflow:
The samples undergo dry and wet etching, followed by PL measurements at various temperatures and incident powers to study the luminescence properties.
5：Data Analysis Methods:
The data is analyzed to understand the changes in PL peak position, FWHM, strain relaxation, and integrated PL intensity due to surface potential modulation.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
