研究目的
To design and develop a 190 GHz Schottky-diode frequency doubler capable of handling up to 260 mW input power, addressing the power handling capability and thermal issues associated with high power inputs.
研究成果
The 190 GHz Schottky-diode frequency doubler demonstrated high power handling capability up to 260 mW input power with a peak efficiency of 8% at 193 GHz. The use of AlN substrate and the proposed diode design methodology effectively addressed the thermal and power handling issues, making it suitable for high power applications in the THz band.
研究不足
The primary goal was set to address the power handling issue with the bandwidth performance moderately compromised. Further optimization on diode geometry is needed for better bandwidth performance.
1：Experimental Design and Method Selection:
A modeling approach incorporating CAD load-pull techniques was used to characterize the diode performance. The doubler circuitry was optimized by co-simulation using ANSYS’s HFSS and Keysight’s ADS.
2：Sample Selection and Data Sources:
A discrete diode chip was designed based on the analysis of diode parameters.
3：List of Experimental Equipment and Materials:
Aluminum nitride ceramic (AlN) was selected as the substrate material for its thermal conductivity.
4：Experimental Procedures and Operational Workflow:
The doubler circuitry was based on a balanced configuration to avoid the use of a filter for input and output signal isolation.
5：Data Analysis Methods:
The performance of the doubler was measured in terms of power conversion efficiency and output power.
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