研究目的
Investigating the effects of gate voltage and temperature on the contact resistance in the Ti-graphene interface and exploring the straightforward formation of p-n junctions.
研究成果
The study demonstrates that Ti/graphene contact resistance is significantly influenced by gate voltage and temperature, with lower resistance at lower temperatures. The Ti contact induces n-doping in graphene, enabling the direct formation of p-n junctions without additional gates or chemical doping. These findings are crucial for advancing graphene-based electronic and optoelectronic devices.
研究不足
The study focuses on Ti/graphene contacts and may not directly apply to other metal-graphene interfaces. The specific conditions of post-annealing and device fabrication may limit the generalizability of the findings.
1：Experimental Design and Method Selection:
The study involved the fabrication of graphene-based FET arrays with Ti/Au electrodes and systematic investigation of the effects of gate voltage and temperature on contact resistance.
2：Sample Selection and Data Sources:
Single crystal graphene films were grown on Cu foil by APCVD and transferred to SiO2/Si substrates.
3：List of Experimental Equipment and Materials:
SEM, Raman microscopy, TEM, electrochemical workstation, PMMA, APS solution, acetone, Ti/Au electrodes.
4：Experimental Procedures and Operational Workflow:
Graphene growth, transfer to substrates, FET fabrication, post-annealing, and electrical transport measurements.
5：Data Analysis Methods:
Extraction of contact resistance using the TLM method, analysis of gate voltage and temperature dependence.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
