研究目的
Investigating the interface superconductivity in SnSe2/graphene van der Waals heterostructures and understanding its mechanism.
研究成果
The study demonstrates interface superconductivity in SnSe2/graphene heterostructures with a conventional character. The superconductivity is attributed to a two-dimensional electron gas formed at the interface. This finding provides new insights into interface superconductivity and suggests potential for exploring novel physics in semiconducting SnSe2 and its heterostructures.
研究不足
The study is limited by the complexity of the interface involved and the inhomogeneity of the superconducting state observed in some regions. The structural ripples of epitaxial graphene may serve as disorder to suppress the coherence peaks.
1：Experimental Design and Method Selection:
The study employs scanning tunneling microscopy (STM) to observe superconductivity at the interface of SnSe2 and graphene. The methodology includes the growth of high-quality SnSe2 films on graphitized SiC(0001) substrate and their characterization using STM.
2：Sample Selection and Data Sources:
SnSe2 films are grown on graphitized SiC(0001) substrate. The samples are prepared using molecular beam epitaxy (MBE) and characterized in situ with STM.
3：List of Experimental Equipment and Materials:
Ultrahigh vacuum cryogenic STM system (Unisoku), MBE for sample preparation, high-purity Sn and Se sources, nitrogen-doped SiC(0001) wafers.
4：Experimental Procedures and Operational Workflow:
SnSe2 films are grown on graphitized SiC(0001) substrate at ~210°C. The samples are then transferred in situ into the STM head for data collection. Tunneling spectra and maps are measured at 0.4 K.
5：4 K.
Data Analysis Methods:
5. Data Analysis Methods: The data is analyzed using standard lock-in techniques with a small bias modulation. The superconducting energy gap is described by the BCS Dynes expression.
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