研究目的
To review the main trends of the on-going modeling and simulation activities in the field of Emerging Memory (EM), pointing out the needs and challenges for the future.
研究成果
The paper highlights the current status of modeling and simulation activities in the field of EM, pointing out areas for future development such as material modeling based on atomistic simulation, integration with downstream tools, an open simulation framework, and the inclusion of mechanical stress and statistical description of memory arrays.
研究不足
The diversity and complexity of the physical mechanisms in EM technologies make the development of general modeling and simulation tools challenging. Specific solutions for a given memory type are often required, and there is a need for more efficient statistical tools and the inclusion of mechanical stress in the modeling framework.
1：Experimental Design and Method Selection:
The paper reviews the ongoing modeling and simulation activities in the field of EM, focusing on the storage element of the memory cell. It summarizes the working principles of selected EM types (PCM, RRAM, STT-MRAM) and discusses the main issues their modeling must address.
2：Sample Selection and Data Sources:
The study is based on the analysis of existing EM technologies and their modeling approaches, without specifying particular samples or datasets.
3：List of Experimental Equipment and Materials:
Not explicitly mentioned.
4：Experimental Procedures and Operational Workflow:
The paper discusses the need for coupling standard electro-thermal simulation with other equations describing specific phenomena in EM technologies, and the necessity of an open framework for adding new physics.
5：Data Analysis Methods:
The paper highlights the importance of atomistic simulation, multi-physics approach, and statistical tools for understanding material properties, electrical behavior, and for material engineering in EM.
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