研究目的
Investigating the mechanism of mobility enhancement after the dehydrogenation process in polycrystalline silicon (poly-Si) thin films.
研究成果
The in-situ N2 ambient dehydrogenation process improved the grain arrangement, reduced the oxygen concentration and oxidized state in poly-Si films, leading to a decrease in trap density near the valence band and an increase in field-effect mobility of poly-Si TFTs.
研究不足
The study focused on the effects of dehydrogenation in N2 and air ambients on poly-Si TFTs, but the distribution of hydrogen concentration was not fully explored, indicating a potential area for further research.
1：Experimental Design and Method Selection:
The study involved dehydrogenation processes in different atmospheres (N2 and air) to observe their effects on poly-Si thin films.
2：Sample Selection and Data Sources:
a-Si:H thin films were deposited with buffer amorphous silicon dioxide (a-SiO2) by using PECVD.
3：List of Experimental Equipment and Materials:
Equipment included PECVD for deposition, XeCl (308 nm) for ELA process, SEM and AFM for surface analysis, EBSD for crystal orientation, XPS and SIMS for chemical state and oxygen concentration analysis.
4：Experimental Procedures and Operational Workflow:
Dehydrogenation was conducted at 450 °C for 300 s in air or an in-situ N2 ambient, followed by ELA process, photolithography, dry etching, and electrical characterization.
5：Data Analysis Methods:
The field-effect mobility, sub-threshold slope factor, threshold voltage, and on/off current ratio were measured. The trap density was calculated using the Meyer-Neldel rule.
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Keithley 4200A-SCS
4200A-SCS
Keithley
Semiconductor Parameter Analyzer for current-voltage (I-V) characteristics measurement.
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PECVD
Deposition of a-Si:H thin films and buffer amorphous silicon dioxide (a-SiO2).
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XeCl
308 nm
Excimer laser annealing (ELA) process.
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SEM
Surface morphology investigation.
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AFM
Surface roughness investigation.
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EBSD
Crystal orientation examination.
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XPS
Chemical states analysis of Si.
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SIMS
Oxygen concentration analysis in poly-Si.
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