研究目的
Investigating the effect of growth pressure on graphene direct growth on r-plane and c-plane sapphires by low-pressure CVD without using a metal catalyst.
研究成果
The study demonstrates that growth pressure has opposite effects on graphene coverage on r-plane and c-plane sapphires, with coverage increasing on r-plane and decreasing on c-plane with higher pressure. The growth mechanisms differ between the two planes, with r-plane growth following a two-dimensional nucleation mode and c-plane growth occurring in pits formed by oxygen desorption.
研究不足
The study focuses on the effect of growth pressure on graphene growth on two specific sapphire planes. The findings may not be directly applicable to other substrates or growth conditions.
1：Experimental Design and Method Selection:
Graphene was grown on r-plane and c-plane sapphires using low-pressure CVD without a metal catalyst. The growth pressure was systematically varied to study its effect on graphene growth.
2：Sample Selection and Data Sources:
r-plane and c-plane sapphires from Kyocera Corp. were used as substrates.
3：List of Experimental Equipment and Materials:
A mixture of nitrogen, hydrogen, and diethylacetylene was used for graphene growth. Raman spectroscopy with a 532 nm laser and atomic force microscopy were used for characterization.
4：Experimental Procedures and Operational Workflow:
Substrates were cleaned, then graphene was grown at 1200°C under varying pressures. After growth, samples were cooled under nitrogen.
5：Data Analysis Methods:
Raman spectroscopy and AFM were used to analyze the graphene's layer number and surface morphology.
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