研究目的
Investigating the robustness under power cycling of three comparable silicon carbide MOSFETs in TO-247 packages from three different manufacturers, with silicon IGBTs serving as reference.
研究成果
The study concludes that power cycling using the body diode to determine junction temperature is a viable method to investigate the aging behavior and reliability of SiC MOSFETs. It highlights the variability and initial degradation as problems that can be solved by individual calibration and the use of a negative gate bias. The results show that SiC MOSFETs are not as mature as Si IGBTs, with all three types of MOSFETs showing degradation of the MOSFET die itself. However, the technology has great potential, as demonstrated by some samples reaching high reliability.
研究不足
The study acknowledges the long test times leading to low sample numbers which do not allow statistical evaluation but provide useful insight into the behavior of TO-packaged SiC MOSFETs under power cycling.
1：Experimental Design and Method Selection:
The study employs power cycling to simulate realistic operating conditions of TO-247 packaged SiC MOSFETs, focusing on junction temperature measurement and ensuring its accuracy.
2：Sample Selection and Data Sources:
Three state-of-the-art types of SiC MOSFETs from different manufacturers and a standard silicon IGBT are selected as devices under test.
3：List of Experimental Equipment and Materials:
A MicReD Industrial Power Tester 1500A is used for heating, temperature measurement, and calibration.
4：Experimental Procedures and Operational Workflow:
Devices are mounted to a large cold plate with an electrically isolating thermal interface material and pressed down with equally torqued screws. Power cycling is conducted with specific on and off times to achieve desired temperature swings.
5：Data Analysis Methods:
Regular measurements of Zth are conducted automatically without removal of the DUT. Detailed characterization of devices is carried out before and after testing, including I-V-measurements and C-V curves.
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