研究目的
To propose a modified route to synthesize graphene flakes using the Chemical Vapor Deposition (CVD) technique with copper substrates and ethanol as the carbon source, aiming to produce non-oxidized graphene with high purity.
研究成果
A novel CVD method, based on plasma-assisted CVD growth, was successfully developed to obtain graphene flakes on copper substrates. The synthesized graphene was characterized as non-oxidized and defect-free, showing promising results for future applications in nanoelectronic devices, sensors, and energy-storage applications.
研究不足
The presence of unwanted by-products and structural damages is inevitable. The transfer process of graphene to other supports may increase the defect amount of the graphene sample.
1：Experimental Design and Method Selection:
The CVD method was slightly modified to obtain graphene, using a mixture of ethanol:N2:H2 to produce a plasma discharge at high temperature for graphene synthesis.
2：Sample Selection and Data Sources:
Polycrystalline copper samples were used as substrates, cleaned with acetic acid before growth.
3：List of Experimental Equipment and Materials:
Quartz reactor, mechanical pump, SEM (Philips, FEG XL-30S), HRTEM (JEOL JEM 3000 F), Confocal 3D Raman Microscope Alpha 300 of WITec Focus Innovations, AFM (Olympus NL levers), FTIR Bruker IFS66v spectrometer.
4：Experimental Procedures and Operational Workflow:
Copper substrates were cleaned and placed into a quartz boat inside a quartz reactor. The temperature was raised to 950°C, and a mixture of N2 gas and ethanol vapor was introduced to generate a plasma blue flash for graphene synthesis.
5：Data Analysis Methods:
The synthesized graphene was characterized by SEM, HRTEM, Raman spectroscopy, XPS, AFM, and FT-IR to analyze its morphology, structure, and purity.
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