研究目的
Investigating the Al2O3 ALD process using aluminum triisopropoxide (ATIP) as a prototypical example of Al-alkoxide precursors to understand its potential as a safe and low-cost alternative to trimethyl aluminum (TMA).
研究成果
The study demonstrates that aluminum triisopropoxide (ATIP) can be used as a safe and low-cost precursor for Al2O3 ALD, with a maximal growth per cycle of 1.8 ?/cycle at 150-175°C. DFT calculations reveal that ligand exchange reactions during the water pulse are crucial for film formation, with low energy barriers facilitating the removal of isopropoxy ligands. This work provides insights into the design of heteroleptic precursors for industrial-scale ALD applications.
研究不足
The study is limited by the use of crystalline γ-Al2O3 (100) surface models for DFT calculations, which may not fully represent the amorphous nature of ALD-deposited films. Additionally, the experimental growth rate and film density may vary with different substrate materials and process conditions.
1：Experimental Design and Method Selection:
The study involves a combined theoretical and experimental investigation of Al2O3 ALD using ATIP and water. The experimental setup includes a home-built ALD reactor for deposition, in-situ mass spectrometry for analysis, and various characterization techniques such as spectroscopic ellipsometry, X-ray reflectivity (XRR), scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS).
2：Sample Selection and Data Sources:
Silicon (100) wafers with native oxide were used as substrates, treated by oxygen plasma to remove surface contamination before deposition.
3：List of Experimental Equipment and Materials:
Equipment includes a home-built ALD reactor, J. A. Woollam M-2000 spectroscopic ellipsometer, FEI Quanta 200 F SEM, Bruker Dimension Edge AFM, and Thermo Scientific Theta Probe XPS system. Materials include aluminum triisopropoxide (ATIP) and water as precursors.
4：Experimental Procedures and Operational Workflow:
The ALD process involves sequential exposures of the substrate to ATIP and water, separated by purging steps with argon gas. The process parameters such as temperature, pressure, and pulse times were optimized for saturation and growth rate measurements.
5：Data Analysis Methods:
Data analysis includes fitting XRR spectra to determine film thickness and density, analyzing mass spectrometry data for reaction byproducts, and using DFT calculations to understand reaction mechanisms.
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