研究目的
To understand the interaction between plasma species and the Al2O3 layer to minimize degradation of surface passivation in crystalline silicon solar cells after plasma processes.
研究成果
VUV light from plasma is the main factor modifying surface passivation, causing an abrupt increase in PL for as-deposited samples due to dissociation of hydroxyl radicals, leading to improved field-effect passivation, followed by degradation from bond breakage at the interface. Annealed samples show only degradation. Defects are stable at room temperature but recoverable with thermal annealing above 150°C.
研究不足
The experiments are conducted at room temperature to avoid photoluminescence quenching and hydrogen diffusion effects; plasma-induced defects are stable at room temperature but recoverable with annealing. The study focuses on Ar/H2 plasma and may not cover all plasma types or conditions.
1：Experimental Design and Method Selection:
The study uses in situ photoluminescence to characterize passivation quality in real time during plasma exposure. A PECVD reactor with integrated PL setup is employed.
2：Sample Selection and Data Sources:
High-quality double-side polished n-type FZ c-Si wafers with specific resistivity and thickness are used. Samples are cleaned with HF, coated with Al2O3 via ALD, and divided into as-deposited and annealed groups.
3：List of Experimental Equipment and Materials:
Equipment includes a thermal ALD reactor (Picosun), PECVD reactor, in situ PL setup, laser (785 nm, 20 mW), photodetector (1130 nm), Sinton WCT-120 for ex-situ characterization, and materials like hydrofluoric acid, trimethylaluminium, water vapor, argon, hydrogen, and magnesium fluoride.
4：Experimental Procedures and Operational Workflow:
Wafers are cleaned, Al2O3 is deposited via ALD at 150°C, some samples are annealed at 380°C in H2, then exposed to Ar/H2 plasma at room temperature with parameters specified. PL signals are measured in real time during exposure. Additional experiments with pure Ar plasma and MgF2 covering are conducted.
5：Data Analysis Methods:
PL intensity is monitored and analyzed to assess passivation quality; minority carrier lifetime is measured using Sinton WCT-120.
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