研究目的
Investigating the passivation effect of a thin aluminium layer on copper films to enhance their stability against air-oxidation for use as transparent electrodes in optoelectronic devices.
研究成果
The 0.8 nm aluminium passivation layer significantly enhances the stability of copper films against oxidation, making them competitive with silver for transparent electrodes. The mechanism involves aluminium segregation to grain boundaries, forming a protective oxide without electrical isolation. This approach is effective even with patterning, supporting its use in optoelectronic devices.
研究不足
The study is limited to specific film thicknesses (9 nm Cu, 0.8 nm Al) and deposition conditions; scalability to industrial processes and long-term performance beyond 7,000 hours were not fully explored. The use of high vacuum equipment may not be feasible for all applications.
1:Experimental Design and Method Selection:
The study involved depositing 9 nm copper films on glass or PET substrates using thermal evaporation, followed by passivation with a 0.8 nm aluminium layer. The effectiveness was evaluated through sheet resistance measurements, AFM, STEM, EDXS, and XPS analyses to understand the passivation mechanism.
2:8 nm aluminium layer. The effectiveness was evaluated through sheet resistance measurements, AFM, STEM, EDXS, and XPS analyses to understand the passivation mechanism. Sample Selection and Data Sources:
2. Sample Selection and Data Sources: Glass microscope slides and PET substrates were used, cleaned and treated with UV/O3. Copper and aluminium films were deposited under high vacuum conditions (<5×10^{-8} mbar).
3:Copper and aluminium films were deposited under high vacuum conditions (<5×10^{-8} mbar). List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment included a thermal evaporator (Kurt J. Lesker SPECTROS system), AFM (Asylum Research MFP-3D), STEM (JEOL ARM200F), XPS (Kratos Axis Ultra DLD), and photolithography tools. Materials included copper, aluminium, alkylsilane adhesion layers, and photoresists.
4:Experimental Procedures and Operational Workflow:
Substrates were cleaned, treated, and metal films deposited. Sheet resistance was measured over time in ambient air. AFM, STEM, and XPS were used for surface and compositional analysis. Lithographic patterning was performed to create apertures.
5:Data Analysis Methods:
Sheet resistance data were analyzed using the Van der Pauw method. AFM images were used to calculate surface roughness. STEM and EDXS provided elemental mapping. XPS data were analyzed with CasaXPS software for chemical state analysis.
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SPECTROS system
Customized
Kurt J. Lesker
Thermal evaporation of metal films
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ARM200F TEM/STEM
ARM200F
JEOL
Transmission electron microscopy and scanning transmission electron microscopy for microstructural analysis
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X-MaxN 100TLE SSD
X-MaxN 100TLE
Oxford Instruments
Energy-dispersive X-ray spectroscopy for elemental analysis
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Axis Ultra DLD spectrometer
Axis Ultra DLD
Kratos
X-ray photoelectron spectroscopy for surface compositional analysis
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Keithley 2400 source meter
2400
Keithley
Measurement of sheet resistance using Van der Pauw method
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MA/BA8 mask aligner
MA/BA8
Suss Microtec
Photolithography for patterning electrodes
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MFP-3D AFM
MFP-3D
Asylum Research
Atomic force microscopy for thickness calibration and surface roughness measurement
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