研究目的
To deposit and characterize p-type cupric oxide (CuO) thin films using a sol-gel technique, optimizing deposition parameters like pH and annealing temperature, and fabricate a p-CuO/n-Si hetero-junction for photovoltaic applications.
研究成果
The sol-gel technique successfully deposited p-type CuO thin films with optimal parameters of pH ~11.0 and annealing temperature ~773 K, resulting in polycrystalline films with grain sizes 50-100 nm, band gaps of 1.46-1.52 eV, and p-type conductivity. A p-CuO/n-Si hetero-junction showed photovoltaic activity with VOC ~359 mV, JSC ~4.65 mA/cm^2, FF ~0.38, and efficiency ~1.05%. The research demonstrates a scalable and cost-effective method for CuO film deposition, with potential for further improvements in device performance.
研究不足
The study is limited to sol-gel deposition method; reproducibility might be affected by precise control of pH and annealing conditions. The efficiency of the fabricated hetero-junction is relatively low (~1.05%), and scalability to industrial levels was not fully demonstrated. Potential optimizations include exploring other deposition parameters or doping to improve electrical and photovoltaic properties.
1：Experimental Design and Method Selection:
The study used a modified colloid-thermal sol-gel technique for depositing CuO thin films via spin casting. The process involved dissolving copper(II) acetate monohydrate in N-N-Dimethylformamide, adjusting pH with ammonium hydroxide, and annealing under partial Ar pressure.
2：Sample Selection and Data Sources:
Films were deposited on glass and n-Si (100) substrates. Five samples (CuO-1 to CuO-5) were prepared under identical optimal conditions (pH ~
3：0, annealing temperature ~773 K). List of Experimental Equipment and Materials:
Copper(II) acetate monohydrate, N-N-Dimethylformamide, ammonium hydroxide, glass substrates, n-Si (100) substrates, spin coater, rapid thermal annealing (RTA) system, FESEM, XRD, TEM, XPS, Raman spectrometer, FTIR spectrometer, UV-Vis spectrophotometer, PL spectrometer, electrical measurement setup (Van der Pauw technique), and equipment for J-V characterization.
4：Experimental Procedures and Operational Workflow:
Steps included solution preparation, pH adjustment, spin coating at 2000 rpm, multiple coatings for thickness build-up, RTA annealing at different temperatures, and characterization using various techniques.
5：Data Analysis Methods:
XRD data analyzed using Scherrer relation and Harris texture analysis; optical data used Tauc plot for band gap; electrical properties calculated using Van der Pauw method; photovoltaic parameters derived from J-V curves under illumination.
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