1：Experimental Design and Method Selection:

The study used a two-step chemical vapor deposition (CVD) method to grow lateral hTMDs with controlled growth orders (forward and reverse core-shell structures). Optical characterizations including photoluminescence (PL) and Raman spectroscopy were employed to analyze strain and substrate interactions.

2：Sample Selection and Data Sources:

Samples were grown on 285 nm thick SiO2/Si substrates. Homologous TMDs (MoS2 and MoSe2) and hTMDs (MoSe2-MoS2 and MoS2-MoSe2 core-shell structures) were synthesized and compared.

3：List of Experimental Equipment and Materials:

Equipment included a CVD oven (Lindberg/Blue M, TF55030C-1), atomic force microscope (Nanowizard I, JPK Instrument), transmission electron microscope (JEOL 2100 and JEM-F200), Raman spectrometer (Triax 320, Horiba Jobin-Yvon), and various lasers and detectors. Materials included MoO3, sulfur, selenium powders, and solvents for cleaning.

4：Experimental Procedures and Operational Workflow:

The CVD growth involved placing substrates and precursors in specific positions, controlling temperatures and gas flows (Ar and H2), and performing growth steps at 650°C. After growth, samples were characterized using AFM, TEM, PL, and Raman mapping with step-by-step procedures for transfer and measurement.

5：Data Analysis Methods:

PL and Raman spectra were analyzed for peak shifts to infer strain. Statistical analysis of multiple grains was performed, and strain calculations were based on thermal expansion coefficient differences.