研究目的
To develop a method for depositing high-quality, stress-free (001) preferentially oriented aluminum nitride (AlN) thin films with high piezoelectric coefficients at low substrate temperatures suitable for MEMS applications.
研究成果
The method successfully deposited high-quality, stress-free (001) AlN thin films with a high piezoelectric coefficient of d33 = (7.33 ± 0.08) pC·N?1 at low temperatures. The films exhibited excellent crystallographic and optical properties, making them suitable for MEMS integration with CMOS technology. Future work could explore broader parameter ranges and applications.
研究不足
The study is limited to specific deposition conditions and substrates; it may not generalize to other materials or setups. Optimization was focused on low-temperature processes, potentially missing higher-temperature benefits. The use of ion-beam sources might introduce complexities in scaling or cost for industrial applications.
1：Experimental Design and Method Selection:
The study used a dual Kaufman ion-beam source setup for reactive sputtering deposition of AlN thin films. The design involved optimizing parameters such as ion-beam energy, current, gas ratios, and substrate temperature to achieve stress-free films with high crystallographic quality.
2：Sample Selection and Data Sources:
AlN films were deposited on four different substrates: Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film. Substrates were pre-cleaned using Ar ion bombardment.
3：List of Experimental Equipment and Materials:
Equipment included Kaufman ion-beam sources (KRI?), a turbomolecular pump, quartz crystal sensor for thickness monitoring, atomic force microscope (Dimension Icon, Bruker), X-ray diffractometer (Rigaku SmartLab system), ellipsometer (J.A. Woollam VASE), and piezoelectric coefficient measurement system (Piezotest PM300). Materials included aluminum target (
4：0). Materials included aluminum target (999% purity), Ar and N2 gases (99999% purity), and various silicon wafers. Experimental Procedures and Operational Workflow:
99.999% purity), Ar and N2 gases (99.99999% purity), and various silicon wafers. 4. Experimental Procedures and Operational Workflow: Films were deposited with controlled parameters (e.g., beam energy, current, gas flows, temperature). Pre-cleaning involved Ar bombardment. Thickness was monitored in situ and verified ex situ. Characterization included XRD for crystallography, ellipsometry for optical properties, and quasi-static measurement for piezoelectric coefficient.
5：Data Analysis Methods:
XRD data were analyzed using Rigaku PDXL2 software for peak fitting. Ellipsometry data were analyzed with WVASE software using Kramers-Kronig consistent oscillators. Stress was calculated using the Stoney formula. Piezoelectric coefficients were measured with specified accuracy.
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Atomic force microscope
Dimension Icon
Bruker
Measures surface roughness of deposited films using ScanAsyst mode.
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X-ray diffractometer
SmartLab
Rigaku
Characterizes crystallographic properties of thin films using various XRD methods.
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Ellipsometer
VASE
J.A. Woollam
Probes optical properties of thin films by measuring ellipsometric angles.
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Kaufman ion-beam source
KRI?
KRI
Used for sputtering deposition of thin films, providing ion beams for material ablation and assistance.
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Charge neutralizer
LFN 2000
KRI
Reduces ion-beam space charge during sputtering to improve deposition quality.
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Turbomolecular pump
Evacuates the sputtering chamber to achieve low base pressure for clean deposition environments.
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Quartz crystal sensor
Monitors deposition rate and film thickness in situ during the sputtering process.
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Piezoelectric coefficient measurement system
PM300
Piezotest
Measures the d33 piezoelectric coefficient of thin films using quasi-static methods.
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