研究目的
To investigate the characteristics of ultrathin Ni films, including thickness, optical constants, and electrical stability, for applications in optoelectronic devices as an alternative to ITO.
研究成果
Ultrathin Ni films exhibit high transparency across UV-Vis-NIR ranges and good electrical stability due to a native oxide layer. Optical techniques provide accurate thickness and constant measurements, confirming discrepancies with sputtering rate estimates. These films are suitable for optoelectronic applications as ITO alternatives.
研究不足
The sputtering rate estimated from thicker films underestimates the real thickness of ultrathin films, indicating variability in growth due to substrate wetting and percolation thresholds. Optical measurements are necessary for accurate thickness determination.
1:Experimental Design and Method Selection:
The study uses RF sputtering to deposit Ni films on fused silica substrates. Optical constants and thickness are determined through multi-angle spectrophotometry and ellipsometry, with validation via X-ray reflectivity (XRR) and X-ray photoelectron spectroscopy (XPS) for composition analysis.
2:Sample Selection and Data Sources:
Two Ni film samples with different thicknesses (3.3 nm and 4.4 nm from sputtering rate) are analyzed. Samples are prepared using a 99.99% pure Ni target in pure Ar gas at room temperature.
3:3 nm and 4 nm from sputtering rate) are analyzed. Samples are prepared using a 99% pure Ni target in pure Ar gas at room temperature. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment includes Perkin Elmer Lambda 950 and Agilent Cary 7000 spectrophotometers for transmittance and reflectance measurements, Horiba Uvisel 2 ellipsometer, KLA-Tencor P-10 profilometer, Vacuum Generator ESCA LAB MKII XPS instrument, and PANalytical Empyrean reflectometer for XRR. Materials include fused silica substrates and a Ni sputtering target.
4:Experimental Procedures and Operational Workflow:
Films are deposited by varying sputtering times. Optical measurements are conducted at multiple angles and wavelengths (200-2000 nm). XPS and XRR measurements are performed to analyze surface composition and thickness, respectively.
5:Data Analysis Methods:
Data are fitted using the Drude model and Lorentzian oscillators for optical constants. Thickness is derived from interference fringes in XRR data. Statistical minimization of mean square error is used in ellipsometry.
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spectrophotometer
Lambda 950
Perkin Elmer
Measure transmittance and reflectance in the wavelength range 200-2000 nm.
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spectrophotometer
Cary 7000
Agilent
Measure transmittance and reflectance in the wavelength range 200-2000 nm.
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reflectometer
Empyrean
PANalytical
Perform X-ray reflectivity measurements to determine film thickness.
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ellipsometer
Uvisel 2
Horiba
Perform ellipsometric measurements to determine optical constants and film thickness.
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profilometer
P-10
KLA-Tencor
Measure film thickness via profilometry.
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XPS instrument
ESCA LAB MKII
Vacuum Generator
Analyze chemical state and composition of film surfaces using X-ray photoelectron spectroscopy.
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sputtering target
Source material for depositing Ni films via RF sputtering.
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