1：Experimental Design and Method Selection:

The study employs a photolithography-based selective passivation method to encapsulate AgNWs on a poly[ether sulfone] (PES) substrate using positive photoresist AZ5214. The development time of the UV-exposed photoresist is varied to control the passivation coverage.

2：The development time of the UV-exposed photoresist is varied to control the passivation coverage. Sample Selection and Data Sources:

2. Sample Selection and Data Sources: AgNWs of 20 nm diameter and 20 μm length suspended in solution from C3NANO are used. They are deposited on PES substrates via spin-coating at 3000 rpm for 1 min, followed by annealing at 130 °C to remove solvents. Ag pads are prepared using a paste.

3：List of Experimental Equipment and Materials:

Equipment includes a spin coater, photolithography system (SF-100 XCEL, Intelligent Micro Patterning, LLC), UV-vis spectrophotometer (Cary 5000, Varian), haze meter (COH 400, Nippon Denshoku), field emission scanning electron microscope (FE-SEM), and digital multimeter (Fluke 87 True RMS Digital Multimeter). Materials include AgNWs, PES substrate, photoresist AZ5214, developer AZ-300MIF, and Ag paste.

4：Experimental Procedures and Operational Workflow:

The process involves spin-coating photoresist on AgNWs, soft baking at 110 °C for 1 min, UV exposure (248 nm) for 1 min, development in AZ-300MIF for varying times (3, 120, 300 s), and hard baking at 110 °C for 90 s. Optical and electrical measurements are conducted post-processing.

5：Data Analysis Methods:

Optical properties (transmittance, haze, yellow index) are measured using specified instruments. Morphological features are analyzed via FE-SEM and ImageJ software for diameter distribution. Electrical properties (sheet resistance, resistance between pads) are measured using a multimeter, with data analyzed to assess stability under high-temperature conditions.