摘要： We present a novel in-depth study correlating multiple solvent properties (boiling point, vapor pressure, and solubilities of P3HT and PCBM) on P3HT and PCBM crystal growth kinetics in blend thin films via in-situ GIWAXS in conjunction with multiple substrate energies. Solvent vapor annealed (SVA) P3HT:PCBM films in a closed chamber, saturated with different solvents (o-dichlorobenzene (DCB), o-xylene, tetrahydrothiophene (THT), toluene, benzene, tetrahydrofuran (THF), and carbon disulfide (CS2)) were studied in real time. We observed that structure growth and dissolution kinetics of the both P3HT and PCBM crystals largely depend on physical properties of solvent and relative solubilities of P3HT and PCBM. The film morphology of the annealed films resulted in PCBM enrichment and occasional crystallization occurred at the solvent vapor saturated air interfaces. We observed strikingly different PCBM crystallization upon annealing of the films when cast from THF resulting in highly ordered PCBM crystals at the film surface. THF has high vapor pressure and relatively low solubilities for both P3HT and PCBM. At the other extreme CS2 produced the lowest crystallinity due to its very high vapor pressure such that the solvent evaporates before significant crystallization can occur. We characterized all the annealed samples using AFM, UV-Vis spectroscopy, and XPS. AFM probed topographic structures with coarsening of both the P3HT and PCBM domains at air surface by solvent annealing. We observe via UV-vis spectroscopy that, in general, intrachain electronic delocalization and interchain electron transitional jump due to π-π stacking increases in the post SVA films. This indicates that the chains are better organized with increased conjugation lengths. SVA has a substantial effect on P3HT monomer to PCBM ratio as determined by XPS at the polymer-air interface. In all cases, relative to the P3HT monomer:PCBM ratio of as-cast films from DCB, the air surfaces became more enriched by PCBM with SVA.