1：Experimental Design and Method Selection:

The study involved growing uniformly oriented graphene seeds epitaxially on a Si-faced 6H-SiC(0001) wafer, depositing Pd to form an amorphous Pd silicide film, and facilitating carbon diffusion to enlarge the seeds into single-oriented graphene. Methods included STM, ARPES, LEED, STEM, and first-principles calculations.

2：Sample Selection and Data Sources:

Si-faced 6H-SiC(0001) wafers were used, etched in H2 gas and treated with Si deposition. Data were collected from experimental measurements and computational models.

3：List of Experimental Equipment and Materials:

Equipment included low-temperature STM (Omicron), ARPES analyzer (SIENTA R3000, Gamma Data), LEED, FIB (JIB-4601F, JEOL), STEM (JEM-ARM 200F, JEOL), Raman microscope (WITEC Alpha300), and FET measurement setup (Keithley SCS-4200). Materials included Pd, Si, H2, Au, PMMA, thermal release tape, and substrates like SiO2/Si.

4：0). Materials included Pd, Si, H2, Au, PMMA, thermal release tape, and substrates like SiO2/Si. Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: Steps involved etching SiC wafers, depositing Si and Pd, heating at various temperatures (e.g., 600-1000°C), performing STM, ARPES, LEED, and STEM imaging, transferring graphene using dry transfer, and measuring Raman spectra and electron mobility.

5：Data Analysis Methods:

Data were analyzed using LEED intensity ratios, ARPES for electronic structure, STM for topography, STEM for cross-sectional imaging, Raman spectroscopy for defect analysis, and first-principles DFT calculations for binding energies.