研究目的
To present a new method for investigating local properties of conformal coatings in microelectronics using AFM with local electrical measurements.
研究成果
The AFM-assisted approach successfully differentiated between intact and defective conformal coatings, enabling identification, spatial localization, and characterization of defects through complementary topographical and electrical measurements. It is a novel and effective method for assessing protective properties in microelectronics, with potential applications in research and development of new coatings.
研究不足
The technique requires specialized AFM equipment and may not provide absolute impedance values due to contributions from tip and contact impedances. It is limited to dry conditions and may not fully replicate real-world environmental exposures. The resolution is constrained by tip curvature and scan parameters.
1:Experimental Design and Method Selection:
The methodology is based on AFM technique, utilizing contact mode for local electrical measurements including impedance imaging, impedance spectroscopy, and dc current mapping to assess protective properties of conformal coatings.
2:Sample Selection and Data Sources:
Two commercially available epoxy-coated electronic printed boards were used—one in as-received state and one after six-year service in industrial conditions. Samples were selected based on their state to compare intact and degraded coatings.
3:List of Experimental Equipment and Materials:
AFM system (SPM Ntegra Aura by NT-MDT Co.), diamond-coated AFM tip (DCP20 by NT-MDT), Parstat 2,236 workstation for impedance spectroscopy, and software (Nova by NT-MDT Co.) for data processing.
4:Experimental Procedures and Operational Workflow:
AFM scans were performed in dry conditions without electrolyte, with a maximum scan area of 8100 μm2, scanning frequency of 1 Hz, and contact force of 6 μN. Impedance imaging used a 3 kHz sinusoidal voltage at 2 V amplitude; impedance spectroscopy used frequencies from 0.1 MHz to 1 Hz with 100 mV RMS perturbation; dc current mapping used a 20 mV bias voltage. Measurements were taken at multiple spots on copper conductor tracks.
5:1 MHz to 1 Hz with 100 mV RMS perturbation; dc current mapping used a 20 mV bias voltage. Measurements were taken at multiple spots on copper conductor tracks. Data Analysis Methods:
5. Data Analysis Methods: Data were analyzed using Nova software to correlate topographical images with electrical measurements (ac current amplitude, impedance spectra, dc current maps) for identifying and localizing defects.
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