研究目的
To study the conditions for parametric oscillation and comb generation in silicon in the near-IR, focusing on the constraints imposed by two-photon absorption and free-carrier absorption, and to explore how these can be overcome using active carrier removal techniques.
研究成果
Parametric oscillation and frequency comb generation are feasible in silicon microring cavities at 1.55 μm and other wavelengths by mitigating free-carrier absorption through active carrier removal using p-i-n junctions. This requires low waveguide losses (≤2-3 dB/cm) and short carrier lifetimes (≤100 ps). The study provides design guidelines and highlights the potential for broad comb bandwidths with proper dispersion engineering.
研究不足
The model does not account for Raman scattering and thermal effects, which could alter the results. Additionally, the analysis is theoretical and based on simulations; experimental validation is not provided. The constraints on waveguide loss and carrier lifetime may be challenging to achieve in practical device fabrication.
1：Experimental Design and Method Selection:
The study uses a mathematical model based on a normalized Lugiato-Lefever equation with additional terms for free carriers to simulate optical parametric oscillation in silicon ring cavities. The model incorporates two-photon absorption and free-carrier effects, and analyzes conditions for gain and oscillation.
2：Sample Selection and Data Sources:
The analysis focuses on silicon ring cavities with specific dimensions (e.g., effective area of 0.1 μm2 for a 550 × 220 nm ridge waveguide with a 70 nm slab) and material parameters derived from literature for silicon at 1.55 μm wavelength.
3：1 μm2 for a 550 × 220 nm ridge waveguide with a 70 nm slab) and material parameters derived from literature for silicon at 55 μm wavelength.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Not applicable as this is a theoretical modeling paper; no physical experiments were conducted. The paper discusses hypothetical devices such as silicon ring cavities with p-i-n junctions for carrier sweep-out.
4：Experimental Procedures and Operational Workflow:
Numerical simulations are performed using the derived equations to study parametric gain, phase matching, and comb formation under various conditions of pump power, detuning, reverse-bias voltage, and dispersion (anomalous and normal).
5：Data Analysis Methods:
The analysis involves solving the Lugiato-Lefever equations, linearizing for stability analysis, and performing numerical simulations to observe dynamics such as Turing rolls, soliton states, and free-carrier oscillations. Results are interpreted in terms of gain thresholds and wavelength dependencies.
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