研究目的
To investigate the influence of using TEA as a complexing agent to prepare CuO thin films by the SILAR technique and to understand the growth mechanism and its impact on the structural, morphological, optical and electrical characteristics.
研究成果
CuO thin films were successfully synthesized using SILAR with TEA, showing that TEA concentration significantly affects structural, morphological, optical, and electrical properties. Optimal performance was found at 0.25 M% TEA with high figure of merit, suggesting potential for optoelectronic applications. Future work could explore other agents or methods.
研究不足
The study is limited to specific TEA concentrations and SILAR method; other complexing agents or deposition techniques were not explored. Room temperature synthesis may not be optimal for all applications, and scalability or industrial applicability is not addressed.
1:Experimental Design and Method Selection:
The SILAR technique was used for deposition at room temperature, with TEA as a complexing agent to chelate with copper ions. The method involves consecutive dipping in cationic and anionic precursor solutions.
2:Sample Selection and Data Sources:
Soda lime glass substrates were used, pre-cleaned. Aqueous copper-ammonia complex ions and hot deionized water were the precursor solutions.
3:List of Experimental Equipment and Materials:
Equipment includes SEM (FEI Quanta 200), materials microscope (Zeiss Axioscope), XRD (Bruker D8 Advance), UV-Vis-NIR spectrophotometer (Jasco Inc.), FTIR spectrophotometer (Bruker VERTEX 70), picoammeter/voltage source (Keithley 6487), analytical balance (Radwag), and contact surface profilometer (NanoMap-500LS). Materials include CuCl2?2H2O (Sigma Aldrich), NH3 (Merck), TEA (Sigma Aldrich), and glass substrates.
4:Experimental Procedures and Operational Workflow:
Substrates were dipped in [Cu(NH3)4]2+ solution for 20s, then in hot water (90°C) for 20s, repeated 12 times. TEA concentrations of 0, 0.25, 0.50, and 1.00 M% were added. Films were annealed at 673 K for 2 hours in air.
5:25, 50, and 00 M% were added. Films were annealed at 673 K for 2 hours in air. Data Analysis Methods:
5. Data Analysis Methods: XRD for structural analysis, SEM and MM for morphology, UV-Vis for optical properties, FTIR for chemical bonding, and four-point probe for electrical measurements. Crystallite size and strain calculated from XRD data, band gap from absorption spectra.
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SEM
Quanta 200
FEI
Investigation of surface morphologies of the deposited films
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X-ray Diffractometer
D8 Advance
Bruker
Evaluation of microstructure and structural features
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FTIR Spectrophotometer
VERTEX 70
Bruker
Recording Fourier transform infra-red spectra
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Picoammeter/Voltage Source
6487
Keithley
Measurement of electrical conductivity and resistivity
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Materials Microscope
Axioscope
Carl Zeiss
Examination of surface morphology
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Analytical Balance
Radwag
Measurement of film thickness by weighing method
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Contact Surface Profilometer
NanoMap-500LS
Measurement of film thickness
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UV-Vis-NIR Spectrophotometer
Jasco Inc.
Recording ultraviolet-visible absorption and transmission spectra
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Cupric Chloride Dihydrate
Sigma Aldrich
Used in cationic precursor solution for CuO film deposition
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Aqueous Ammonia Solution
Merck
Used in cationic precursor solution
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Triethanolamine
Sigma Aldrich
Complexing agent added to growth solutions
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