研究目的
To analyze Bi incorporation into ZnO:Al and ZnO:Ga transparent and electrically conductive thin films for applications as transparent photoelectrodes and thermoelectric materials.
研究成果
Bi incorporation in ZnO:Al and ZnO:Ga films was successfully controlled and characterized, showing potential for thermoelectric applications due to reduced thermal conductivity. Key findings include maximum Bi contents of 1.5 at.% for ZnO:Al and 2.4 at.% for ZnO:Ga, with surface enrichment and oxygen deficiency enhancing electrical properties.
研究不足
The study is limited to specific deposition conditions and characterization techniques; Bi evaporation during sputtering and annealing may affect results, and techniques have different depth sensitivities leading to disparities in Bi content measurements. Future work with additional methods like X-ray absorption is suggested.
1：Experimental Design and Method Selection:
The study used confocal d.c. magnetron sputtering to deposit thin films, with compositional analysis via RBS, XPS, EDX, and PIXE. The design aimed to control Bi doping levels to maintain optical transparency.
2：Sample Selection and Data Sources:
Films were deposited on Si substrates with <100> orientation, cleaned and etched prior to deposition. Samples varied in Bi target current density (JBi).
3：List of Experimental Equipment and Materials:
A home-made d.c. magnetron sputtering system with two circular magnetrons, Bi metal target (
4：95% purity), ZnO:
Ga and ZnO:Al targets (FHR Anlagenbau GmbH), Si substrates (SIEGERT WAFER GmbH, Part-No: L14016), isopropanol for cleaning, argon gas, and various spectrometers (RBS/PIXE with Van de Graaff accelerator, XPS with Kratos Axis-Supra, EDX with FEI NOVA NanoSEM 200, XRD with Bruker AXS D8).
5：8). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Substrates were cleaned and etched, then films were deposited with fixed parameters (e.g., deposition time 20 min, temperature 200°C) while varying JBi. Post-deposition thermal annealing at 350°C in vacuum was performed. Characterization involved RBS, XPS, EDX, and XRD measurements with specified settings.
6：Data Analysis Methods:
RBS data analyzed with NDF code, XPS data fitted with Lorentzian/Gaussian functions, EDX and PIXE for elemental quantification, XRD for structural analysis.
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XPS instrument
Axis-Supra
Kratos
X-ray photoelectron spectroscopy analysis
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d.c. magnetron sputtering system
home-made
Deposition of thin films
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Bi target
FHR Anlagenbau GmbH
Source for Bi doping
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ZnO:Ga target
ZnO(95.5)Ga2O3(4.5) wt.%
FHR Anlagenbau GmbH
Source for ZnO:Ga matrix
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ZnO:Al target
ZnO(98)Al2O3(2) wt.%
FHR Anlagenbau GmbH
Source for ZnO:Al matrix
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Si substrate
L14016
SIEGERT WAFER GmbH
Substrate for film deposition
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Van de Graaff accelerator
Used for RBS and PIXE measurements
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EDX equipment
EDAX
Energy-dispersive X-ray spectroscopy
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XRD diffractometer
D8
Bruker AXS
X-ray diffraction analysis
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