研究目的
To investigate the effects of substrate temperature on the structural, optical, and electrical properties of copper-doped tin disulfide thin films prepared by spray pyrolysis for photovoltaic applications.
研究成果
The substrate temperature significantly influences the physical properties of SnS2:Cu thin films. Higher temperatures increase grain size and carrier mobility, decrease resistivity, and alter the optical band gap in an increasing-decreasing trend. The films exhibit n-type conductivity, making them suitable for optoelectronic applications. Future studies could explore different doping concentrations or deposition parameters to further optimize properties.
研究不足
The study is limited to specific substrate temperatures (400-450 °C) and doping concentration (1% Cu). Potential limitations include the volatility of sulfur at high temperatures affecting stoichiometry, and the use of glass substrates which may introduce amorphous background in XRD. Optimization could involve broader temperature ranges or alternative doping levels.
1：Experimental Design and Method Selection:
The study uses spray pyrolysis for deposition due to its versatility, viability, and low cost. Characterization methods include XRD for structural analysis, SEM for morphology, UV-vis for optical properties, and electrical measurements using the DC two-probe method and Hall effect analysis.
2：Sample Selection and Data Sources:
Thin films are deposited on glass substrates at temperatures of 400, 425, and 450 °C. Precursors include tin chloride, thiourea, and copper chloride to achieve 1% Cu doping in SnS
3：List of Experimental Equipment and Materials:
Equipment includes a spray pyrolysis setup, XRD system (D8 Advanced Bruker), SEM (KYKY EM 3200), UV-vis spectrophotometer (Agilent 8453), profilometer (Taly step), light meter (TES-1339), and multimeter (UNI-T). Materials include glass substrates, SnCl4·5H2O, thiourea, CuCl2, and deionized water.
4：Experimental Procedures and Operational Workflow:
Substrates are cleaned and placed on a rotating hot plate. The precursor solution is sprayed under controlled conditions (distance 35 cm, pressure 3 atm, deposition rate 10, volume 50 mL). Films are characterized post-deposition using XRD, SEM, UV-vis, and electrical measurements including resistivity and photosensitivity under light illumination.
5：Data Analysis Methods:
XRD data analyzed for grain size and strain using Scherrer's equation. Optical band gap determined from Tauc plots. Electrical properties analyzed using Hall effect and resistivity measurements.
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