摘要： Cuprous iodide (CuI) was grown on the Si (100) and Cu films/Si(100) substrate by hydrothermal reaction and hydrothermal evaporation methods. It has been found that all the hydrothermal methods. Different nanostructured CuI have been obtained using photoluminescence (PL) character of nanostructured CuI, the origin of different PL emissions and the different growth mechanisms have been discussed. Then, the nanostructured CuI films have a γ phase with polycrystalline structure. Having analyzed the short-wavelength optoelectronic devices [1-3]. Moreover, CuI possesses some superior properties, such as high hole mobility, excellent p-type conductivity and high transmissivity. These properties make CuI a promising material for applications in the photodetectors [2], transparent conducting films [4], solid-state dye solar cells [5-8] and light-emitting diode [9]. Though different fabrication methods have been used to synthesize CuI [10-14], it is still a challenge to grow epitaxial thin films of CuI with high quality due to the lack of lattice-matched substrates. Commonly for the mismatch substrate, interface strain can be much easier accommodated in the nanostructure than the films. Furthermore, owing to their large surface-to-volume ratio, nanostructured CuI can exhibit special advantage in devices applications, especially for the solid state electrolyte in solar cell and hole transport layer in photodetector applications [1-3]. Here, nanostructured CuI have been synthetized on the Si (100) substrate by hydrothermal methods. The structure and optical properties have been investigated. Photodetector based on n-ZnO/p-CuI heterojunction have been fabricated and the photoelectric properties are also discussed.