1：Experimental Design and Method Selection:

The study involved fabricating CdS/p-Si heterostructures using thermal evaporation and exposing them to gamma irradiation at various doses (0-80 kGy) to analyze changes in structural, optical, and electrical properties. Theoretical models like Kubelka-Munk theory for band gap calculation and Anderson model for energy band diagram were employed.

2：Sample Selection and Data Sources:

CdS thin films were deposited on p-type Si substrates. Samples were irradiated with gamma doses of 10, 20, 40, and 80 kGy. Data were collected from XRD, SEM, UV-Vis DRS, PL, and I-V measurements.

3：List of Experimental Equipment and Materials:

Equipment included thermal evaporator for deposition, gamma source (60Co, MDS Nordion Model SC220E), X-ray diffractometer (Bruker D8 Discover), spectrofluorometer (JESCO FP-8200), UV-Vis spectrometer (JASCO-V 670), and semiconductor characterization system (KEITHLEY 4200 SCS/CVU). Materials included CdS powder (99.999% pure, Sigma Aldrich), p-Si substrates, and aluminum for electrodes.

4：999% pure, Sigma Aldrich), p-Si substrates, and aluminum for electrodes. Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: CdS films were deposited by thermal evaporation at 200°C and 10^-5 Torr pressure, with thickness controlled to 300 nm. Gamma irradiation was performed at specified doses. Post-irradiation, Al electrodes were deposited. Structural, optical, and electrical measurements were conducted using the listed equipment under standard conditions (e.g., room temperature for PL and I-V).

5：Data Analysis Methods:

XRD data were analyzed for crystallite size, micro-strain, and dislocation density using standard formulas. Optical band gap was determined from diffuse reflectance spectra using Kubelka-Munk theory and Tauc's plot. I-V characteristics were analyzed to extract ideality factor, saturation current, barrier height, and series resistance using Cheung's method and standard diode equations.