研究目的
To investigate the dependence of electrical characteristics and die shear strength of directly-bonded n-4H-SiC/p+-Si junctions on the annealing temperature during the bonding process, specifically focusing on the first lower-temperature annealing step.
研究成果
The research demonstrates that increasing the annealing temperature in the first step of the bonding process improves the electrical characteristics (e.g., reduced reverse-bias current and impurity concentration closer to SiC) and mechanical strength of directly-bonded SiC/Si junctions. This highlights the critical role of the initial lower-temperature annealing in achieving better junction performance, suggesting avenues for optimizing bonding processes in semiconductor device fabrication.
研究不足
The study is limited to specific annealing temperatures and conditions; it does not explore a wider range of temperatures or other bonding parameters. The comparison with SAB is based on prior work, not direct experimental control in this study. Potential optimizations could include varying the second annealing step or using different surface treatments.
1：Experimental Design and Method Selection:
The study uses a direct bonding method with a two-step annealing process (lower-temperature first step and higher-temperature second step) to fabricate SiC/Si junctions, comparing electrical and mechanical properties based on annealing temperature variations.
2：Sample Selection and Data Sources:
Samples were fabricated using a p+-Si substrate and an n-4H-SiC epitaxial substrate with specific impurity concentrations. Three samples were prepared with first-step annealing at RT (26°C), 200°C, and 300°C, with the second step fixed at 700°C.
3：List of Experimental Equipment and Materials:
Equipment includes vacuum evaporation system for metal contacts, annealing furnace, SEM for imaging, C-V and I-V measurement setups, and die shear strength tester. Materials include acetone, IPA, BHF, Sulfuric Hydrogen Peroxide Mixture solution, DI water, Al/Ni/Au multilayer metals, and N2 gas.
4：Experimental Procedures and Operational Workflow:
Substrates were cleaned, ohmic contacts formed, surfaces contacted in DI water, annealed in two steps (first step at varying temperatures with 5.5N force in vacuum for 5 hours, second step at 700°C in ambient for 1 hour), followed by C-V, I-V, and die shear strength measurements.
5：5N force in vacuum for 5 hours, second step at 700°C in ambient for 1 hour), followed by C-V, I-V, and die shear strength measurements.
Data Analysis Methods:
5. Data Analysis Methods: Data from C-V measurements were used to extract impurity concentrations, I-V characteristics were analyzed for current behavior, and die shear strength was measured quantitatively; comparisons were made with reference samples and prior methods like SAB.
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