研究目的
To present a voltage-controlled tunable phase shifter based on few-layer graphene, offering a simpler alternative to existing technologies with advantages in ease of fabrication, compactness, low cost, and low control voltage requirements.
研究成果
The proposed graphene-based phase shifter achieves a phase change of approximately 40° with a 3 dB insertion loss degradation, offering advantages over traditional technologies such as ferrites and semiconductors in terms of ease of realization, compactness, low cost, and low control voltage requirements.
研究不足
The phase shifter operates in a limited frequency range (5-6 GHz), with insertion loss degradation up to 3 dB. The technology may have scalability or integration challenges compared to other nanomaterials.
1：Experimental Design and Method Selection:
The phase shifter was designed as a stub-loaded line with a microstrip line and a shorted stub integrated with a graphene pad. Simulations were performed using the commercial FEM solver HFSS to optimize dimensions for maximum phase shift and minimum insertion loss.
2：Sample Selection and Data Sources:
A prototype was fabricated on a Taconic RF-35 substrate with specific dimensions. Graphene flakes were deposited using microwave exfoliation.
3：List of Experimental Equipment and Materials:
Equipment includes an LPKF micromilling machine for fabrication, a vector network analyzer for measurements, and a bias tee for applying voltage. Materials include the Taconic RF-35 substrate, conductive paste, and few-layer graphene flakes.
4：Experimental Procedures and Operational Workflow:
The prototype was fabricated, and DC resistance of graphene was measured versus bias voltage. Scattering parameters were measured in the 5-6 GHz range using a calibrated vector network analyzer with bias applied.
5：Data Analysis Methods:
Data from simulations and measurements were compared to validate performance, focusing on phase shift and insertion loss.
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