研究目的
To develop a methodology using the micro four-point probe (μ4PP) technique to electrically characterize single nanometer-wide fins in dense arrays, enabling precise measurement of individual fin resistance and correlation with nanometric width variations for use in electrical critical dimension metrology.
研究成果
The μ4PP technique, with controlled punch-through current, enables precise electrical characterization of individual nanometer-wide Si fins in dense arrays, achieving a sensitivity to fin width variations down to about 0.5 nm. This high precision makes it suitable for electrical critical dimension metrology in semiconductor manufacturing.
研究不足
The exact behavior of electrical contact formation on dense fins is not fully understood, and a more thorough description would include pulse duration, peak voltage, and material properties. The technique may have limitations in very complex or varied material systems.
1：Experimental Design and Method Selection:
The methodology involves using the micro four-point probe (μ4PP) technique with carefully controlled electrical contact formation via punch-through current to isolate measurements to individual fins in dense arrays. Theoretical models include the relation Rfin = Rs × s/Wfin for resistance calculation.
2：Sample Selection and Data Sources:
Samples consist of dense arrays of nanometer-wide Si fins, specifically ca. 20 nm wide Si fins implanted with B (3 × 10^15 cm^-2, 5 kV) and laser-annealed three times at 1150 °C. Fin widths were measured using transmission electron microscopy (TEM).
3：List of Experimental Equipment and Materials:
Equipment includes the CAPRES A300 tool with μ4PP electrodes (Ni-coated Si cantilevers with spacing of 8 μm and contact size dcontact ≈ 300 nm), scanning electron microscopy (SEM) for electrode characterization, and TEM for fin width measurement. Materials include Si fins and Ni-coated electrodes.
4：Experimental Procedures and Operational Workflow:
Electrodes are landed on the sample surface; a punch-through current pulse (Ipulse) is applied to break down native oxides and establish electrical contact. For dense fins, Ipulse is controlled (e.g., 25 μA) to restrict contact to one fin. Current Iin is injected, and voltage V is measured to calculate Rfin = V/Iin. Measurements are repeated with step sizes of ca. 25 nm over the fin array.
5：Data Analysis Methods:
Data analysis involves calculating Rfin, determining relative standard deviation for precision, correlating Rfin with Wfin from TEM, and fitting to constant sheet resistance models. Statistical techniques include standard deviation calculations and linear fitting.
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